Features Specifications:
Polysilicon Ingots
High quality Silicon Ingots 6" and 8" inch high quality ingots
Growing method: CZ
Purity: 6N at least, solar grade
Crystallinity: Mono-crystalline
Donor type / Dopant: P / Boron
Dislocation density: d3000cm-2
Orientation: 100±3°face and diagonal
Oxygen concentration: d1χ1018 atoms/cm3
Carbon concentration: d5χ1016 atoms/cm3
Resistivity: 0.5 - 3.0 ohm/cm or 3.0 - 6 ohm/cm
Diameter for: 156mm and 125 mm
square wafers: 152±1mm (round), 205
±1mm (round)
The length of Ingot: 150mm-400mm
Growth Method: CZ Conductive Type: P 
Dopant: B Orientation: 100>
Resistivity: 0.5-3Ωcm &3-6Ωcm
Minority Carrier Lifetime: >10μs
Oxygen content: ≤1.0*10^18 at/cm³
Carton content: ≤5.0*10^16 at/cm³
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